Gespeichert in:
| Titel: | Semiconductor surfaces and interfaces |
|---|---|
| Von: |
Winfried Mönch
|
| Person: |
Mönch, Winfried
Verfasser aut |
| Hauptverfasser: | |
| Format: | Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2001
|
| Ausgabe: | 3., rev. ed. |
| Schriftenreihe: | Springer series in surface sciences
26 |
| Notation: | UP 1090 UP 3150 UP 7570 |
| Schlagwörter: | |
| Medienzugang: | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009079722&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009079722&sequence=000004&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA |
| Umfang: | XVI, 548 S. Ill., graph. Darst. |
| ISBN: | 3540679022 |
Internformat
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| 245 | 1 | 0 | |a Semiconductor surfaces and interfaces |c Winfried Mönch |
| 250 | |a 3., rev. ed. | ||
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2001 | |
| 300 | |a XVI, 548 S. |b Ill., graph. Darst. | ||
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| 490 | 1 | |a Springer series in surface sciences |v 26 | |
| 490 | 0 | |a Physics and astronomy online library | |
| 650 | 4 | |a Semiconductors |x Junctions | |
| 650 | 4 | |a Semiconductors |x Surfaces | |
| 650 | 4 | |a Surface chemistry | |
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Datensatz im Suchindex
| DE-BY-UBR_call_number | 84/UP 7570 M693(3) |
|---|---|
| DE-BY-UBR_katkey | 3104447 |
| DE-BY-UBR_location | UB Lesesaal Physik |
| DE-BY-UBR_media_number | 069030183822 |
| _version_ | 1835108301975584768 |
| adam_text | Contents
1. Introduction 1
1.1 Historical Remarks 1
1.2 Surface Space-Charge and Surface States:
Some Preliminary Remarks 13
2. Surface Space-Charge Region in Thermal Equilibrium .... 21
2.1 Solutions of Poisson s Equation 21
2.2 Surface Space-Charge 25
2.3 Shape of Surface Barriers 27
2.4 Comparison of Space-Charge Layers
at Semiconductor and Metal Surfaces 28
2.5 Quantum Size-Effects in Space-Charge Layers 28
3. Surface States 33
3.1 Virtual Gap States of the Complex Band Structure 33
3.2 Intrinsic Surface States: Nearly Free Electron Model 36
3.3 Intrinsic Surface States: Tight-Binding Approximation 44
3.4 Dangling Bonds 47
3.5 Adatom-Induced Surface States: Tight-Binding Approach.... 51
3.6 Adatom-Induced Surface Dipoles: Electronegativity Concept . 53
3.7 Adatom-Induced Surface States and Dipoles: ViGS Model ... 56
4. Occupation of Surface States and Surface Band-Bending
in Thermal Equilibrium 59
5. Surface Space-Charge Region in Non-Equilibrium 67
5.1 Surface Photovoltage 67
5.2 Dember Effect 73
5.3 Surface Transport 74
5.3.1 Surface Excess of Carriers 74
5.3.2 Surface Conductance 76
5.3.3 Surface Mobility 76
5.3.4 Field Effect of Surface Conductance 78
XII Contents
6. Interface States 81
6.1 Metal-Semiconductor Contacts: Metal-Induced Gap States .. 81
6.2 MIGS-and-Electronegativity Model
of Metal-Semiconductor Contacts 86
6.3 Slope Parameters of Barrier Heights in Schottky Contacts ... 91
6.4 Defects at Metal-Semiconductor Interfaces 93
6.5 Band Lineup in Semiconductor Heterostructures:
IFIGS-and-Electronegativity Model 96
6.6 Band Lineup at Semiconductor Heterostructures:
Tight-Binding Approach 98
6.7 Historical Notes 100
7. Cleaved {110} Surfaces of III-V
and II-VI Compound Semiconductors 105
7.1 Ionicity and Core-Level Spectroscopy
of Compound Semiconductors 105
7.1.1 Layer Model of Photoemitted Electrons 105
7.1.2 Charge Transfer in the Bulk
of Compound Semiconductors 109
7.2 Surface Core-Level Shifts 112
7.3 Geometrical Surface Structure 114
7.4 Surface Phonons 122
7.5 Electronic Surface States 128
7.5.1 Intrinsic Versus Extrinsic Surface States 128
7.5.2 Cleavage-Induced Surface States:
InAs(llO) as an Example 131
7.5.3 Intrinsic Surface States 133
7.6 Temperature Dependence of the Ionization Energy 137
7.7 Chemical Trends of the Ionization Energy 140
8. {100} Surfaces of III-V, II-VI,
and I-VII Compound Semiconductors
with Zincblende Structure 145
8.1 Reconstructions and Trends in Chemical Compositions 145
8.2 Dimerization 150
8.3 Missing Dimer Structures 153
8.4 Dimerization, Occupation of Dangling Bonds,
and Electron Counting 161
8.5 Intrinsic Surface Band Structure 166
8.6 Fermi-Level Pinning by Extrinsic Surface States 167
8.7 Ionization Energy 168
9. {100} Surfaces of Diamond, Silicon, Germanium,
and Cubic Silicon Carbide 169
9.1 Atomic Arrangement 169
Contents XIII
9.2 Strain Effects on Si(OOl) Surfaces 175
9.3 Electronic Surface Properties 177
9.4 Surface Core-Level Shifts 181
9.5 Reversible 2x1^ c(4 x 2) Surface Phase Transition 183
9.6 /3-SiC(001) Surfaces 186
10. Diamond, Silicon, and Germanium
{lll}-2 x 1 Surfaces 193
10.1 Cleaved Silicon and Germanium Surfaces 194
10.1.1 Early Models of (lll)-2 x 1 Reconstructions
and Core-Level Shifts 194
10.1.2 Band Structure of Dangling-Bond Surface States:
Experimental Data 197
10.1.3 Surface Band Gap 202
10.1.4 Tilted Chains 206
10.1.5 Band Structure of Dangling-Bond Surface States:
Theoretical Results 213
10.2 Clean Diamond {111} Surfaces 213
10.2.1 Atomic Arrangement 213
10.2.2 Electronic Properties 215
10.3 Clean Diamond and Cleaved Silicon
and Germanium {111} Surfaces in Comparison 217
11. Si(lll)-7 X 7 and Ge(lll)-c(2 X 8) Surfaces 219
11.1 Preparation of Clean Si(lll)-7 x 7
and Ge(lll)-c(2 x 8) Surfaces 219
11.2 Si(lll)-7 x 7: Atomic Arrangement 221
11.2.1 Elements of the 7x7 Reconstruction
on Si(lll) Surfaces 221
11.2.2 Dimer-Adatom-Stacking Fault Model 225
11.3 Ge(lll)-c(2 x 8): Atomic Arrangement 229
11.4 Electronic Structure of Si(lll)-7 x 7
and Ge(lll)-c(2 x 8) Surfaces 232
11.4.1 Electronic Band Structure 232
11.4.2 Core-Level Spectroscopy 234
11.5 Energetics of Reconstructions on {111} Surfaces
of Si and Ge: 7 x 7 Versus c(2 x 8) 237
12. Phase Transitions on Silicon and Germanium
{111} Surfaces 241
12.1 Si(lll)-7x 7^ lx 1
and Ge(lll)-c(2 x8)^ 1 x 1 Phase Transitions 241
12.2 Ge(lll)- 1 x 1 High-Temperature Phase Transition 246
12.3 Irreversible Conversion of 2 x 1 Reconstructions
on Cleaved Si and Ge Surfaces 247
XIV Contents
13. {111} Surfaces of Compounds with Zincblende Structure . 255
13.1 [lll]-Oriented Surfaces 255
13.2 [TTT]-Oriented Surfaces 257
14. Monovalent Adatoms 263
14.1 Adsorption of Halogens 263
14.1.1 Dissociative Adsorption 263
14.1.2 Bond Lengths and Adsorption Sites 269
14.2 Adsorption of Hydrogen 272
14.2.1 Si(001):H-Surfaces 272
14.2.2 Si(lll):H-J(7 x 7) Surfaces 275
14.2.3 Si(lll)- and Ge(lll):H-l x 1 Surfaces 276
14.3 Alkali and Silver Adatoms on Si{100} Surfaces 280
14.4 Monovalent Metal Adatoms on Si and Ge {111} Surfaces .... 283
14.4.1 Alkali Adatoms on Si(lll)-7 x 7 Surfaces 283
14.4.2 Si(lll):Ag- and Ge(lll):Ag-(v/3 x /3)R30o
Structures 284
14.4.3 Si(lll):Au- and Ge(lll):Au-( /3 x x/3)R30°
Structures 287
14.4.4 3x1 Reconstructions Induced by Alkali
and Silver Adatoms on Si (111) Surfaces 288
14.5 Growth Kinetics of Metals on Cleaved GaAs(llO) Surfaces. .. 291
14.6 Adatom-Induced Surface Core-Level Shifts 300
14.7 Adatom-Induced Surface Dipoles 307
14.7.1 Mutual Interactions in Plane Arrays
of Surface Dipoles 307
14.7.2 Surface Dipoles Induced by Alkali Adatoms 309
14.7.3 Hydrogen-Induced Surface Dipoles 311
14.8 Adatom-Induced Surface States 316
14.8.1 Cesium Adatoms on Cleaved Si Surfaces 316
14.8.2 Metal Adatoms on GaAs(llO) Surfaces 317
14.8.3 Nonmetal Adatoms on GaAs(llO) Surfaces 324
15. Group-III Adatoms on Silicon Surfaces 329
15.1 Si(lll):III-(v/3 x V3)R30° Reconstructions 329
15.1.1 A1-, Ga-, and In-Induced (V3 x v/3)R30°
Reconstructions 330
15.1.2 B-Induced (y/3 x v/3)R30° Reconstruction 333
15.2 Reconstructions Induced by Group-III Adatoms
on {100} Surfaces of Si and Ge 334
16. Group-V Adatoms 339
16.1 Si(lll):As-l x 1 and Si(001):As- and Si(001):Sb-2 x 1
Surfaces 339
Contents XV
16.2 Sb- and Bi-induced ( /3 x V3)R30° Structures
on Si and Ge(lll) Surfaces 343
16.3 GaP-, GaAs-, and InP(110):Sb-l x 1 Surfaces 347
16.4 III-V(110):Bi-l x 1 Surfaces 350
17. Oxidation of Silicon and III-V Compound
Semiconductors 353
17.1 Si(lll) Surfaces 353
17.1.1 Precursor-Mediated Chemisorption
on Si(lll)-7 x 7 Surfaces 354
17.1.2 Oxygen-Induced Si(2p) Core-Level Shifts 361
17.1.3 Field-Assisted Oxidation 364
17.2 III-V Compound Semiconductors 366
17.2.1 Oxidation Kinetics on GaAs(llO) Surfaces 367
17.2.2 Photon-Stimulated Oxidation 371
17.2.3 Core-Level Spectroscopy:
Growth Mode and Composition of Oxide Films 372
18. Surface Passivation by Adsorbates and Surfactants 377
18.1 Surface Passivation by Hydrogen 377
18.2 Surfactant-Mediated Growth 381
19. Semiconductor Interfaces 385
19.1 Metal-Semiconductor Contacts 386
19.1.1 Current Transport
Across Metal-Semiconductor Contacts 386
19.1.2 Image-Force Effect 388
19.1.3 Determination of Barrier Heights:
A Brief Comparison of Methods 389
19.1.4 Barrier Heights of Real Schottky Contacts 392
19.1.5 Laterally Inhomogeneous Schottky Contacts 1:
Circular Patches 400
19.1.6 Laterally Inhomogeneous Schottky Contacts 2:
BEEM 402
19.1.7 Laterally Inhomogeneous Schottky Contacts 3:
I/V Characteristics 407
19.1.8 The MIGS-and-Electronegativity Concept:
Experiment and Theory 411
19.1.9 Direct Observations of MIGS 418
19.1.10 Extrinsic Interface Dipoles 1: Interface Doping 420
19.1.11 Extrinsic Interface Dipoles 2:
Metal/Si(lll)-(7 x 7) Contacts 424
19.1.12 Extrinsic Interface Dipoles 3:
Epitaxial Silicide/Silicon Interfaces 427
XVI Contents
19.1.13 Origin of Lateral Barrier-Height Inhomogeneities 1:
Natural Nonuniformities 434
19.1.14 Origin of Lateral Barrier-Height Inhomogeneities 2:
Extrinsic Nonuniformities 435
19.1.15 Slope Parameter 437
19.1.16 Schottky Contacts on Ternary III-V Alloys 439
19.1.17 Temperature and High-Pressure Effects 444
19.1.18 Ohmic Contacts 451
19.2 Semiconductor Heterostructures 455
19.2.1 Band-Structure Lineup 455
19.2.2 Interface Dipoles at Polar Interfaces 457
19.2.3 Lattice-Matched Ternary and Quaternary
III-V Alloys 461
19.2.4 Pressure and Temperature Dependence
of Valence-Band Offsets 467
19.2.5 Pseudomorphic Interfaces 468
19.2.6 Metamorphic Heterostructures 471
19.3 Layered Semiconductors 472
19.4 Insulator Interfaces 476
19.4.1 Metal-Insulator Contacts 476
19.4.2 Semiconductor-Insulator Interfaces 479
Appendix 483
References 487
Index of Reconstructions and Adsorbates 535
Subject Index 539
Contents
1. Introduction 1
1.1 Historical Remarks 1
1.2 Surface Space Charge and Surface States:
Some Preliminary Remarks 13
2. Surface Space Charge Region in Thermal Equilibrium .... 21
2.1 Solutions of Poisson s Equation 21
2.2 Surface Space Charge 25
2.3 Shape of Surface Barriers 27
2.4 Comparison of Space Charge Layers
at Semiconductor and Metal Surfaces 28
2.5 Quantum Size Effects in Space Charge Layers 28
3. Surface States 33
3.1 Virtual Gap States of the Complex Band Structure 33
3.2 Intrinsic Surface States: Nearly Free Electron Model 36
3.3 Intrinsic Surface States: Tight Binding Approximation 44
3.4 Dangling Bonds 47
3.5 Adatom Induced Surface States: Tight Binding Approach.... 51
3.6 Adatom Induced Surface Dipoles: Electronegativity Concept . 53
3.7 Adatom Induced Surface States and Dipoles: ViGS Model ... 56
4. Occupation of Surface States and Surface Band Bending
in Thermal Equilibrium 59
5. Surface Space Charge Region in Non Equilibrium 67
5.1 Surface Photovoltage 67
5.2 Dember Effect 73
5.3 Surface Transport 74
5.3.1 Surface Excess of Carriers 74
5.3.2 Surface Conductance 76
5.3.3 Surface Mobility 76
5.3.4 Field Effect of Surface Conductance 78
XII Contents
6. Interface States 81
6.1 Metal Semiconductor Contacts: Metal Induced Gap States .. 81
6.2 MIGS and Electronegativity Model
of Metal Semiconductor Contacts 86
6.3 Slope Parameters of Barrier Heights in Schottky Contacts ... 91
6.4 Defects at Metal Semiconductor Interfaces 93
6.5 Band Lineup in Semiconductor Heterostructures:
IFIGS and Electronegativity Model 96
6.6 Band Lineup at Semiconductor Heterostructures:
Tight Binding Approach 98
6.7 Historical Notes 100
7. Cleaved {110} Surfaces of III V
and II VI Compound Semiconductors 105
7.1 Ionicity and Core Level Spectroscopy
of Compound Semiconductors 105
7.1.1 Layer Model of Photoemitted Electrons 105
7.1.2 Charge Transfer in the Bulk
of Compound Semiconductors 109
7.2 Surface Core Level Shifts 112
7.3 Geometrical Surface Structure 114
7.4 Surface Phonons 122
7.5 Electronic Surface States 128
7.5.1 Intrinsic Versus Extrinsic Surface States 128
7.5.2 Cleavage Induced Surface States:
InAs(llO) as an Example 131
7.5.3 Intrinsic Surface States 133
7.6 Temperature Dependence of the Ionization Energy 137
7.7 Chemical Trends of the Ionization Energy 140
8. {100} Surfaces of III V, II VI,
and I VII Compound Semiconductors
with Zincblende Structure 145
8.1 Reconstructions and Trends in Chemical Compositions 145
8.2 Dimerization 150
8.3 Missing Dimer Structures 153
8.4 Dimerization, Occupation of Dangling Bonds,
and Electron Counting 161
8.5 Intrinsic Surface Band Structure 166
8.6 Fermi Level Pinning by Extrinsic Surface States 167
8.7 Ionization Energy 168
9. {100} Surfaces of Diamond, Silicon, Germanium,
and Cubic Silicon Carbide 169
9.1 Atomic Arrangement 169
Contents XIII
9.2 Strain Effects on Si(OOl) Surfaces 175
9.3 Electronic Surface Properties 177
9.4 Surface Core Level Shifts 181
9.5 Reversible 2x1^ c(4 x 2) Surface Phase Transition 183
9.6 /3 SiC(001) Surfaces 186
10. Diamond, Silicon, and Germanium
{lll} 2 x 1 Surfaces 193
10.1 Cleaved Silicon and Germanium Surfaces 194
10.1.1 Early Models of (lll) 2 x 1 Reconstructions
and Core Level Shifts 194
10.1.2 Band Structure of Dangling Bond Surface States:
Experimental Data 197
10.1.3 Surface Band Gap 202
10.1.4 Tilted Chains 206
10.1.5 Band Structure of Dangling Bond Surface States:
Theoretical Results 213
10.2 Clean Diamond {111} Surfaces 213
10.2.1 Atomic Arrangement 213
10.2.2 Electronic Properties 215
10.3 Clean Diamond and Cleaved Silicon
and Germanium {111} Surfaces in Comparison 217
11. Si(lll) 7 X 7 and Ge(lll) c(2 X 8) Surfaces 219
11.1 Preparation of Clean Si(lll) 7 x 7
and Ge(lll) c(2 x 8) Surfaces 219
11.2 Si(lll) 7 x 7: Atomic Arrangement 221
11.2.1 Elements of the 7x7 Reconstruction
on Si(lll) Surfaces 221
11.2.2 Dimer Adatom Stacking Fault Model 225
11.3 Ge(lll) c(2 x 8): Atomic Arrangement 229
11.4 Electronic Structure of Si(lll) 7 x 7
and Ge(lll) c(2 x 8) Surfaces 232
11.4.1 Electronic Band Structure 232
11.4.2 Core Level Spectroscopy 234
11.5 Energetics of Reconstructions on {111} Surfaces
of Si and Ge: 7 x 7 Versus c(2 x 8) 237
12. Phase Transitions on Silicon and Germanium
{111} Surfaces 241
12.1 Si(lll) 7x 7^ lx 1
and Ge(lll) c(2 x8)^ 1 x 1 Phase Transitions 241
12.2 Ge(lll) 1 x 1 High Temperature Phase Transition 246
12.3 Irreversible Conversion of 2 x 1 Reconstructions
on Cleaved Si and Ge Surfaces 247
XIV Contents
13. {111} Surfaces of Compounds with Zincblende Structure . 255
13.1 [lll] Oriented Surfaces 255
13.2 [TTT] Oriented Surfaces 257
14. Monovalent Adatoms 263
14.1 Adsorption of Halogens 263
14.1.1 Dissociative Adsorption 263
14.1.2 Bond Lengths and Adsorption Sites 269
14.2 Adsorption of Hydrogen 272
14.2.1 Si(001):H Surfaces 272
14.2.2 Si(lll):H J(7 x 7) Surfaces 275
14.2.3 Si(lll) and Ge(lll):H l x 1 Surfaces 276
14.3 Alkali and Silver Adatoms on Si{100} Surfaces 280
14.4 Monovalent Metal Adatoms on Si and Ge {111} Surfaces .... 283
14.4.1 Alkali Adatoms on Si(lll) 7 x 7 Surfaces 283
14.4.2 Si(lll):Ag and Ge(lll):Ag (v/3 x /3)R30o
Structures 284
14.4.3 Si(lll):Au and Ge(lll):Au ( /3 x x/3)R30°
Structures 287
14.4.4 3x1 Reconstructions Induced by Alkali
and Silver Adatoms on Si (111) Surfaces 288
14.5 Growth Kinetics of Metals on Cleaved GaAs(llO) Surfaces. .. 291
14.6 Adatom Induced Surface Core Level Shifts 300
14.7 Adatom Induced Surface Dipoles 307
14.7.1 Mutual Interactions in Plane Arrays
of Surface Dipoles 307
14.7.2 Surface Dipoles Induced by Alkali Adatoms 309
14.7.3 Hydrogen Induced Surface Dipoles 311
14.8 Adatom Induced Surface States 316
14.8.1 Cesium Adatoms on Cleaved Si Surfaces 316
14.8.2 Metal Adatoms on GaAs(llO) Surfaces 317
14.8.3 Nonmetal Adatoms on GaAs(llO) Surfaces 324
15. Group III Adatoms on Silicon Surfaces 329
15.1 Si(lll):III (v/3 x V3)R30° Reconstructions 329
15.1.1 A1 , Ga , and In Induced (V3 x v/3)R30°
Reconstructions 330
15.1.2 B Induced (y/3 x v/3)R30° Reconstruction 333
15.2 Reconstructions Induced by Group III Adatoms
on {100} Surfaces of Si and Ge 334
16. Group V Adatoms 339
16.1 Si(lll):As l x 1 and Si(001):As and Si(001):Sb 2 x 1
Surfaces 339
Contents XV
16.2 Sb and Bi induced ( /3 x V3)R30° Structures
on Si and Ge(lll) Surfaces 343
16.3 GaP , GaAs , and InP(110):Sb l x 1 Surfaces 347
16.4 III V(110):Bi l x 1 Surfaces 350
17. Oxidation of Silicon and III V Compound
Semiconductors 353
17.1 Si(lll) Surfaces 353
17.1.1 Precursor Mediated Chemisorption
on Si(lll) 7 x 7 Surfaces 354
17.1.2 Oxygen Induced Si(2p) Core Level Shifts 361
17.1.3 Field Assisted Oxidation 364
17.2 III V Compound Semiconductors 366
17.2.1 Oxidation Kinetics on GaAs(llO) Surfaces 367
17.2.2 Photon Stimulated Oxidation 371
17.2.3 Core Level Spectroscopy:
Growth Mode and Composition of Oxide Films 372
18. Surface Passivation by Adsorbates and Surfactants 377
18.1 Surface Passivation by Hydrogen 377
18.2 Surfactant Mediated Growth 381
19. Semiconductor Interfaces 385
19.1 Metal Semiconductor Contacts 386
19.1.1 Current Transport
Across Metal Semiconductor Contacts 386
19.1.2 Image Force Effect 388
19.1.3 Determination of Barrier Heights:
A Brief Comparison of Methods 389
19.1.4 Barrier Heights of Real Schottky Contacts 392
19.1.5 Laterally Inhomogeneous Schottky Contacts 1:
Circular Patches 400
19.1.6 Laterally Inhomogeneous Schottky Contacts 2:
BEEM 402
19.1.7 Laterally Inhomogeneous Schottky Contacts 3:
I/V Characteristics 407
19.1.8 The MIGS and Electronegativity Concept:
Experiment and Theory 411
19.1.9 Direct Observations of MIGS 418
19.1.10 Extrinsic Interface Dipoles 1: Interface Doping 420
19.1.11 Extrinsic Interface Dipoles 2:
Metal/Si(lll) (7 x 7) Contacts 424
19.1.12 Extrinsic Interface Dipoles 3:
Epitaxial Silicide/Silicon Interfaces 427
XVI Contents
19.1.13 Origin of Lateral Barrier Height Inhomogeneities 1:
Natural Nonuniformities 434
19.1.14 Origin of Lateral Barrier Height Inhomogeneities 2:
Extrinsic Nonuniformities 435
19.1.15 Slope Parameter 437
19.1.16 Schottky Contacts on Ternary III V Alloys 439
19.1.17 Temperature and High Pressure Effects 444
19.1.18 Ohmic Contacts 451
19.2 Semiconductor Heterostructures 455
19.2.1 Band Structure Lineup 455
19.2.2 Interface Dipoles at Polar Interfaces 457
19.2.3 Lattice Matched Ternary and Quaternary
III V Alloys 461
19.2.4 Pressure and Temperature Dependence
of Valence Band Offsets 467
19.2.5 Pseudomorphic Interfaces 468
19.2.6 Metamorphic Heterostructures 471
19.3 Layered Semiconductors 472
19.4 Insulator Interfaces 476
19.4.1 Metal Insulator Contacts 476
19.4.2 Semiconductor Insulator Interfaces 479
Appendix 483
References 487
Index of Reconstructions and Adsorbates 535
Subject Index 539
|
| any_adam_object | 1 |
| author | Mönch, Winfried |
| author_facet | Mönch, Winfried |
| author_role | aut |
| author_sort | Mönch, Winfried |
| author_variant | w m wm |
| building | Verbundindex |
| bvnumber | BV013315624 |
| callnumber-first | Q - Science |
| callnumber-label | QC611 |
| callnumber-raw | QC611.6.S9 |
| callnumber-search | QC611.6.S9 |
| callnumber-sort | QC 3611.6 S9 |
| callnumber-subject | QC - Physics |
| classification_rvk | UP 1090 UP 3150 UP 7570 |
| ctrlnum | (OCoLC)44811872 (DE-599)BVBBV013315624 |
| dewey-full | 537.6/22 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6/22 |
| dewey-search | 537.6/22 |
| dewey-sort | 3537.6 222 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| edition | 3., rev. ed. |
| format | Book |
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| id | DE-604.BV013315624 |
| illustrated | Illustrated |
| indexdate | 2024-12-20T10:45:05Z |
| institution | BVB |
| isbn | 3540679022 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009079722 |
| oclc_num | 44811872 |
| open_access_boolean | |
| owner | DE-703 DE-355 DE-BY-UBR DE-1050 DE-20 DE-29T DE-384 DE-634 DE-83 DE-188 DE-706 |
| owner_facet | DE-703 DE-355 DE-BY-UBR DE-1050 DE-20 DE-29T DE-384 DE-634 DE-83 DE-188 DE-706 |
| physical | XVI, 548 S. Ill., graph. Darst. |
| publishDate | 2001 |
| publishDateSearch | 2001 |
| publishDateSort | 2001 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in surface sciences |
| series2 | Springer series in surface sciences Physics and astronomy online library |
| spellingShingle | Mönch, Winfried Semiconductor surfaces and interfaces Springer series in surface sciences Semiconductors Junctions Semiconductors Surfaces Surface chemistry Oberfläche (DE-588)4042907-6 gnd Oberflächenchemie (DE-588)4126166-5 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd Halbleiter (DE-588)4022993-2 gnd Grenzschicht (DE-588)4022005-9 gnd |
| subject_GND | (DE-588)4042907-6 (DE-588)4126166-5 (DE-588)4137418-6 (DE-588)4158802-2 (DE-588)4022993-2 (DE-588)4022005-9 |
| title | Semiconductor surfaces and interfaces |
| title_auth | Semiconductor surfaces and interfaces |
| title_exact_search | Semiconductor surfaces and interfaces |
| title_full | Semiconductor surfaces and interfaces Winfried Mönch |
| title_fullStr | Semiconductor surfaces and interfaces Winfried Mönch |
| title_full_unstemmed | Semiconductor surfaces and interfaces Winfried Mönch |
| title_short | Semiconductor surfaces and interfaces |
| title_sort | semiconductor surfaces and interfaces |
| topic | Semiconductors Junctions Semiconductors Surfaces Surface chemistry Oberfläche (DE-588)4042907-6 gnd Oberflächenchemie (DE-588)4126166-5 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd Halbleiter (DE-588)4022993-2 gnd Grenzschicht (DE-588)4022005-9 gnd |
| topic_facet | Semiconductors Junctions Semiconductors Surfaces Surface chemistry Oberfläche Oberflächenchemie Halbleiteroberfläche Halbleitergrenzfläche Halbleiter Grenzschicht |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009079722&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009079722&sequence=000004&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000600785 |
| work_keys_str_mv | AT monchwinfried semiconductorsurfacesandinterfaces |
Inhaltsverzeichnis
UB Lesesaal Physik
Signatur notieren und vor Ort nutzen oder für zwei Wochen ausleihen| Signatur: | 84 UP 7570 M693(3) |
|---|---|
| Exemplar 1 | entleihbar Vorhanden |